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Resumen: A monolithically integrated optoelectronic receiver with a low-capacitance on-chip pin photodiode is presented. The receiver is fabricated in a 0.35µm opto-CMOS process fed at 3.3V and due to the highly effective integrated pin photodiode it operates at µW. A regenerative latch acting as a sense amplifier leads in addition to a low electrical power consumption. At 400 Mbit/s, sensitivities of -26.0dBm and -25.5dBm are achieved, respectively, for ¿ = 635nm and ¿ = 675nm (BER =10-9) with an energy efficiency of 2 pJ/bit.
Idioma: Inglés
DOI: 10.3390/s16060761
Año: 2016
Publicado en: SENSORS 16, 6 (2016), 761
ISSN: 1424-8220
Financiación: info:eu-repo/grantAgreement/ES/MEC/CAS14-00326
Financiación: info:eu-repo/grantAgreement/ES/MINECO/TEC2011-23211
Financiación: info:eu-repo/grantAgreement/ES/MINECO/TEC2014-52840-R
Tipo y forma: Article (Published version)
Área (Departamento): Electrónica (Departamento de Ingeniería Electrónica y Comunicaciones)

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